Title :
Experimental determination of electroabsorption in GaAs/Al0.32 Ga0.68As multiple quantum well structures as function of well width
Author :
Alavi, K. ; Engelmann, R.W.H.
fDate :
12/8/1988 12:00:00 AM
Abstract :
Electroabsorption in GaAs/Al0.32Ga0.68As multiple quantum well structures was experimentally studied for quantum well widths in the range 50-260 Å. The maximum obtainable change in absorption coefficient was found to increase monotonically with decreasing well width at the cost of increasing electric field
Keywords :
III-V semiconductors; aluminium compounds; electroabsorption; gallium arsenide; semiconductor quantum wells; 50 to 260 A; GaAs-Al0.32Ga0.68As; absorption coefficient; electric field; electroabsorption; multiple quantum well structures; well width;
Journal_Title :
Electronics Letters
