A novel impact-ionization model for 1-µm-MOSFET simulation

In this work, a new formula for the impact-ionization process in silicon is derived. Compared with former descriptions, e.g., Chynoweth\´s law, this model offers the advantage to accurately calculate the ionization rates even in the case of nonhomogeneous electric fields. The idea of this model takes advantage of Shockley\´s "lucky-electron" model and the resulting formula is suited for implementation into device simulators to calculate impact-ionization-induced mechanisms. As an example, the model has been used together with the MINIMOS program to calculate the breakdown-voltage improvement of LDD MOSFET\´s.