DocumentCode
1100279
Title
Active mode-locking of 1.3 μm extended-cavity silicon chip Bragg reflector laser
Author
Raybon, G. ; Tucker, Rodney ; Eisenstein, Gadi ; Henry, C.H.
Author_Institution
AT&T Bell Labs., Holmdel, NJ
Volume
24
Issue
25
fYear
1988
fDate
12/8/1988 12:00:00 AM
Firstpage
1563
Lastpage
1565
Abstract
The authors report active mode-locking of an extended-cavity silicon chip Bragg reflector laser. Pulses of 27 ps duration at repetition rates up to 7 GHz, have been achieved with a controllable narrow optical spectrum
Keywords
distributed Bragg reflector lasers; elemental semiconductors; integrated optics; laser cavity resonators; laser mode locking; laser transitions; optical communication equipment; optical waveguides; semiconductor junction lasers; silicon; 1.3 micron; 27 ps; 7 GHz; Bragg reflector laser; Si chip laser; active mode-locking; controllable narrow optical spectrum; extended-cavity; high bit rate optical signal transmission; optical communication equipment; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
29217
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