Title :
Active mode-locking of 1.3 μm extended-cavity silicon chip Bragg reflector laser
Author :
Raybon, G. ; Tucker, Rodney ; Eisenstein, Gadi ; Henry, C.H.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ
fDate :
12/8/1988 12:00:00 AM
Abstract :
The authors report active mode-locking of an extended-cavity silicon chip Bragg reflector laser. Pulses of 27 ps duration at repetition rates up to 7 GHz, have been achieved with a controllable narrow optical spectrum
Keywords :
distributed Bragg reflector lasers; elemental semiconductors; integrated optics; laser cavity resonators; laser mode locking; laser transitions; optical communication equipment; optical waveguides; semiconductor junction lasers; silicon; 1.3 micron; 27 ps; 7 GHz; Bragg reflector laser; Si chip laser; active mode-locking; controllable narrow optical spectrum; extended-cavity; high bit rate optical signal transmission; optical communication equipment; semiconductor lasers;
Journal_Title :
Electronics Letters
