GaInAsP dual wavelength laser

Author

Piccirilli, A.B. ; Dutta, N.K. ; Karlicek, Robert F. ; Wynn, J.D.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ

Volume

24

Issue

25

fYear

1988

fDate

12/8/1988 12:00:00 AM

Firstpage

1565

Lastpage

1566

Abstract

The fabrication and performance characteristics of a dual wavelength laser emitting near 1.3 μm and 1.55 μm are described. The lasers are of the etched mesa buried heterostructure type, and utilise semi-insulating InP layers both the lateral optical confinement and current confinement. The 1.55 μm emission is at a single wavelength by virtue of the frequency selective feedback provided by a grating etched on the substrate. The lasers have threshold currents in the 20 to 40 mA range, and have quantum efficiencies comparable to single emitter lasers

Keywords

III-V semiconductors; diffraction gratings; feedback; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser transitions; optical communication equipment; optical waveguides; semiconductor junction lasers; 1.3 micron; 1.55 micron; 20 to 40 mA; GaInAsP-InP; III-V semiconductors; WDM; buried heterostructure type; current confinement; dual wavelength laser; etched grating; etched mesa; fabrication; fibre optic transmission; frequency selective feedback; lateral optical confinement; performance characteristics; semi-insulating InP layers; semiconductor lasers; semiinsulating layers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

29218