Title :
Noise characteristics of GaAs metal-semiconductor-metal photodiodes
Author :
Wada, O. ; Hamaguchi, Hiroki ; Le Beller, L.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fDate :
12/8/1988 12:00:00 AM
Abstract :
Noise spectral density was measured for GaAs metal-semiconductor-metal photodiodes. The noise spectral density is determined solely by the photocurrent shot noise at low bias voltage, but it exhibits a contribution of excess noise associated with the photocurrent gain at high bias voltage
Keywords :
III-V semiconductors; aluminium; electron device noise; gallium arsenide; metal-semiconductor-metal structures; photodiodes; random noise; Al-GaAs; III-V semiconductors; MSM type; excess noise; high bias voltage; metal-semiconductor-metal photodiodes; noise spectral density; photocurrent gain; photocurrent shot noise;
Journal_Title :
Electronics Letters
