Title :
Gallium arsenide Schottky power rectifiers
Author :
Baliga, Jayant B. ; Sears, A.R. ; Barnicle, M.M. ; Campbell, P.M. ; Garwacki, W. ; Walden, J.P.
Author_Institution :
General Electric Company, Schenectady, NY
fDate :
6/1/1985 12:00:00 AM
Abstract :
This paper discusses the development of high-performance gallium arsenide Schottky rectifiers for power switching applications. These diodes are shown to exhibit superior turn-on and turn-off dynamic switching characteristics when compared with silicon p-i-n rectifiers. The theoretical analysis presented in the paper indicates that the gallium arsenide Schottky power rectifier will be attractive for high-frequency power switching circuits operating at 1.00-300 V.
Keywords :
Epitaxial layers; Gallium arsenide; P-i-n diodes; PIN photodiodes; Power supplies; Rectifiers; Schottky diodes; Silicon; Switching circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22085
