Title :
Development of advanced CMOS-compatible bipolar transistor for BiCMOS technology
Author :
Nouailhat, A. ; Giroult, G. ; Delpech, P. ; Gerodolle, A.
Author_Institution :
CNET, Meylan
fDate :
12/8/1988 12:00:00 AM
Abstract :
A fully CMOS-compatible single-level polycide bipolar technology is studied. Two dimensional (2D) process simulations of the device have been carried out and compared with SIMS measurements. Fabrication steps, process simulations and first electrical results are presented and discussed
Keywords :
BIMOS integrated circuits; integrated circuit technology; BiCMOS technology; SIMS measurements; advanced CMOS-compatible bipolar transistor; fabrication; process simulations; single-level polycide;
Journal_Title :
Electronics Letters
