DocumentCode
1100418
Title
A formula for the concentration profile of a buried layer with back diffusion
Author
Shier, John S.
Author_Institution
VTC Inc., Bloomington, MN
Volume
32
Issue
6
fYear
1985
fDate
6/1/1985 12:00:00 AM
Firstpage
1142
Lastpage
1143
Abstract
A simple formula allows an accurate dopant concentration profile to be calculated for a Gaussian buried layer with back diffusion into an epitaxial layer. The formula is valid when the drive-in diffusion is dominant, when the back diffusion is dominant, and for intermediate cases.
Keywords
Computer errors; Epitaxial growth; Epitaxial layers; Equations; Etching; Gaussian distribution; Semiconductor process modeling; Substrates; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22088
Filename
1484834
Link To Document