Title :
Threshold dependency on reabsorption loss in injection lasers
Author :
Stern, F. ; Gonda, Tomohiro ; Junker, H.
Author_Institution :
IBM Zurich Research Lab., rüschlikon, Zürich, Switzerland
fDate :
11/1/1965 12:00:00 AM
Keywords :
Absorption; Charge carrier processes; Diode lasers; Electron optics; Equations; Gallium arsenide; Optical losses; Temperature dependence; Temperature distribution; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1965.1072249
