DocumentCode :
1100473
Title :
MOS hydrogen sensors with ultrathin layers of palladium
Author :
Maclay, G. Jordon
Author_Institution :
University of Illinois at Chicago, Chicago, IL
Volume :
32
Issue :
7
fYear :
1985
fDate :
7/1/1985 12:00:00 AM
Firstpage :
1158
Lastpage :
1164
Abstract :
MOS gas sensors were fabricated on n- and p-type silicon (5-7 Ω. cm) with thermal oxide layers ranging in thickness from 66 to 269 Å. A layer of palladium 30 Å thick was deposited through an evaporation mask. A layer of gold 350 Å thick was deposited over the palladium to provide a continuous electrical contact. Measurements were made of the capacitance at 1 MHz as a function of gasambient and time. The devices showed sensitivity to hydrogen at room temperature. Compared to devices fabricated with 300-Å layers of palladium, the thin film devices showed much faster response and recovery at room temperature and reduced magnitude of response. Devices fabricated on p-type silicon were noticably faster than those fabricated on n-silicon. First-order reaction kinetic fits showed general agreement with the data.
Keywords :
Capacitance measurement; Contacts; Gas detectors; Gold; Hydrogen; Palladium; Silicon; Temperature sensors; Thin film devices; Time measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22093
Filename :
1484839
Link To Document :
بازگشت