Title :
Performance of Carbon monoxide-sensitive MOSFET´s with metal-Oxide semiconductor gates
Author :
Dobos, Karoly ; Zimmer, Gunter
Author_Institution :
University of Dortmund, Dortmund, Germany
fDate :
7/1/1985 12:00:00 AM
Abstract :
A multilayer PdO-Pd-gate metallization was investigated at a MOS-CO sensor. This type of metallization gives a high CO sensitivity and a good electrical control of the transistor. The performance of this sensor was investigated in comparison to a commercial SnO2resistor CO sensor.
Keywords :
Electrons; Gas detectors; Hydrogen; MOS devices; MOSFETs; Metal-insulator structures; Metallization; Semiconductivity; Semiconductor materials; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22094
