Title :
Linewidth and offset frequency locking of external cavity GaAlAs lasers
Author :
Harrison, J. ; Mooradian, A.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
Stable external cavity GaAlAs lasers operated with full-width-at-half-maximum (FWHM) linewidths of less than 3 kHz are discussed. Offset frequency locking has been demonstrated over long periods to within the 10-Hz resolution bandwidth of the experiment. The spectral characteristics of these devices are presented graphically
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser frequency stability; semiconductor junction lasers; spectral line breadth; FWHM linewidths; external cavity GaAlAs lasers; offset frequency locking; resolution bandwidth; spectral characteristics; Bandwidth; Diode lasers; Frequency; Laser feedback; Laser noise; Laser stability; Noise reduction; Optical feedback; Optical mixing; Optical noise; Semiconductor device noise; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
