DocumentCode
1100607
Title
A MoSi2 Schottky diode for bipolar LSI´s
Author
Yamamoto, Yousuke ; Miyanaga, Hiroshi ; Amazawa, Takao ; Sakai, Tadashi ; Sakai, Tetsushi
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
Volume
32
Issue
7
fYear
1985
fDate
7/1/1985 12:00:00 AM
Firstpage
1231
Lastpage
1239
Abstract
Fabrication and characterization of a molybdenum silicide Schottky diode have been investigated for its application to large-scale bipolar logic LSI´s using a Schottky TTL. The diode consists of a silicon
Keywords
Aluminum; Clamps; Electrodes; Fabrication; Heat treatment; Large scale integration; Schottky diodes; Semiconductor diodes; Silicides; Voltage control;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22106
Filename
1484852
Link To Document