DocumentCode :
1100607
Title :
A MoSi2Schottky diode for bipolar LSI´s
Author :
Yamamoto, Yousuke ; Miyanaga, Hiroshi ; Amazawa, Takao ; Sakai, Tadashi ; Sakai, Tetsushi
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
Volume :
32
Issue :
7
fYear :
1985
fDate :
7/1/1985 12:00:00 AM
Firstpage :
1231
Lastpage :
1239
Abstract :
Fabrication and characterization of a molybdenum silicide Schottky diode have been investigated for its application to large-scale bipolar logic LSI´s using a Schottky TTL. The diode consists of a silicon
Keywords :
Aluminum; Clamps; Electrodes; Fabrication; Heat treatment; Large scale integration; Schottky diodes; Semiconductor diodes; Silicides; Voltage control;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22106
Filename :
1484852
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1100607
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