Title :
GaAs FET RF switches
Author :
Gopinath, Anand ; Rankin, Bruce J.
Author_Institution :
MIT Lincoln Laboratory, Lexington, MA
fDate :
7/1/1985 12:00:00 AM
Abstract :
The device parameter dependences of GaAs FET switch performance have been determined analytically and by two-dimension simulation. FET switch design would maximize the value of the switch quality factor while retaining the power handling capacity. Expressions for both the quality factor and power handling capacity are derived in terms of device parameters, and would enable such optimization to be performed.
Keywords :
Electrodes; Equivalent circuits; FETs; Gallium arsenide; Impedance; Performance analysis; Q factor; Radio frequency; Switches; Switching circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22111
