Narrow spectral linewidth 1.5 μm GaInAsP/InP distributed Bragg reflector (DBR) lasers

Author

Takahashi, Mitsuo ; Michitsuji, Yasunori ; Yoshimura, Manabu ; Yamazoe, Yoshimitsu ; Nishizawa, Hideaki ; Sugimoto, Tetsuo

Author_Institution

Sumitomo Electr. Ind. Ltd., Osaka, Japan

Volume

25

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1280

Lastpage

1287

Abstract

The spectral linewidth of distributed Bragg reflector (DBR) lasers is discussed. The narrowest linewidth of 3.2 MHz was obtained at P =1.5 mW. It was found that narrow spectral linewidths can be obtained constantly for the DBR lasers with long and low optical loss corrugation regions, and with a small coupling coefficient. These results are explained by the external cavity model, which is used in the theoretical analysis. To increase the output power of the narrow-linewidth DBR lasers, AR (antireflection) coating was applied to the output facet. Improved quantum efficiency and submode suppression were achieved. Degradation of the linewidths by the AR coating was insignificant

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; spectral line breadth; 1.5 micron; DBR lasers; GaInAsP-InP; antireflection coating; coupling coefficient; external cavity model; optical loss corrugation regions; output power; quantum efficiency; spectral linewidth; submode suppression; Coatings; Degradation; Distributed Bragg reflectors; Indium phosphide; Laser modes; Laser theory; Optical coupling; Optical losses; Power generation; Power lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.29258

Filename

29258