Title :
Measurement of Johnson Noise Induced by p-Stops in Silicon Microstrip Detectors
Author :
Giacomini, G. ; Bosisio, Luciano ; Rashevskaya, Irina
Author_Institution :
FBK-CMM-SRS (Fondazione Bruno Kessler-Center for Mater. & Microsyst.-Silicon Radiat. Sensors), Trento, Italy
Abstract :
We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/ SiO2 interface.
Keywords :
microstrip components; silicon compounds; silicon radiation detectors; thermal noise; Johnson noise measurements; Si-SiO2; bias voltages; double-sided AC-coupled punch-through biased silicon strip detectors; electron accumulation layer; noise terms disentanglement; p-stops; peaking times; silicon microstrip detectors; Microstrip; Noise; Noise measurement; Sensors; Silicon; Strips; Voltage measurement; Johnson noise; microstrip silicon detectors; noise; p-spray; p-stop; silicon radiation detectors; thermal noise;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2276069
