DocumentCode
1100679
Title
An Hg0.3 Cd0.7 Te avalanche photodiode for optical-fiber transmission systems at λ = 1.3 µm
Author
Alabedra, Robert ; Orsal, Bernard ; Lecoy, Gilles ; Pichard, Guy ; Meslage, Jean ; Fragnon, Patrick
Author_Institution
Université des Science et Techniques du Languedoc, Montpellier Cedex, France
Volume
32
Issue
7
fYear
1985
fDate
7/1/1985 12:00:00 AM
Firstpage
1302
Lastpage
1306
Abstract
The purpose of this paper is the characterization of Hg0.3 Cd0.7 Te avalanche photodiodes at γ = 1.3 µm. These devices are manufactured by tile Société Anonyme des Télécommunications. The multiplication noise for these APD\´s is measured. The value of the ratio 
= β/α is deduced from noise measurements, β and α being, respectively, the hole and electron ionization coefficients. It is shown that these HgCdTe APD\´s are promising candidates for detectors of 1.3-µm optical communication.
= β/α is deduced from noise measurements, β and α being, respectively, the hole and electron ionization coefficients. It is shown that these HgCdTe APD\´s are promising candidates for detectors of 1.3-µm optical communication.Keywords
Avalanche photodiodes; Charge carrier processes; Ionization; Manufacturing; Mercury (metals); Noise measurement; Optical detectors; Optical noise; Tellurium; Tiles;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22115
Filename
1484861
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