Title :
DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants
Author :
Boenke, Myra M. ; Wu, M.C. ; Wang, Shyh ; Clark, William M., Jr. ; Stevens, Eugene H. ; Utlaut, Mark W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
A static plasma grating has been demonstrated experimentally (see M.C. Wu et al., Appl. Phys. Lett., vol.53, no.4, p.265-7, 1988) in a large-optical-cavity focused-ion-beam-distributed-Bragg-reflector (FIB-DBR) GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam. The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimization of the laser design is developed and presented. The computed results show that the coupling coefficient k can be increased by more than an order of magnitude over the 15 cm 1 experimentally. Therefore, FIB-DBR (or FIB-distributed-feedback (DFB)) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; ion implantation; semiconductor junction lasers; FIB-DBR laser; GaAlAs-GaAs laser diode; Kramers-Kronig relations; carrier concentration; coupling coefficient; dopant stripes; focused ion beam implanted dopants; focused-ion-beam-distributed-Bragg-reflector; index grating; laser design; nondynamic plasma grating; periodic fluctuations; Design optimization; Diode lasers; Distributed Bragg reflectors; Fluctuations; Gallium arsenide; Gratings; Ion beams; Laser modes; Plasmas; Semiconductor process modeling;
Journal_Title :
Quantum Electronics, IEEE Journal of
