A physical model for the conductance of gated p-i-n switches

Analytic models for the steady-state forward current-voltage characteristic of a p⁺-p-π-p-n⁺gated-diode switch (GDS) are developed. The models, which apply generally to gated bipolar switches, are based on a system of equations derived from basic p-i-n-diode theory. They provide physical insight into the GDS operation and suggest optimal design criteria to minimize the de and incremental resistances at high currents. Measured data taken from a variety of GDS test structures are discussed in support of the models.