Title :
High-speed 1.5 μm self-aligned constricted mesa DFB lasers grown entirely by MOCVD
Author :
Hirayama, Yuzo ; Furuyama, Hideto ; Morinaga, Motoyasu ; Suzuki, Nobuo ; Kushibe, Mitsuhiro ; Eguchi, Kazuhiro ; Nakamura, Masaru
Author_Institution :
Toshiba Res. & Dev. Center, Kawasaki, Japan
fDate :
6/1/1989 12:00:00 AM
Abstract :
Ultrahigh-speed 1.5 μm wavelength self-aligned constricted mesa GaInAsP-InP distributed-feedback lasers grown entirely by low-pressure metalorganic chemical-vapor deposition are discussed. A self-aligned process was applied to lower the stray InP junction capacitance to as low as 1.6 pF. A record bandwidth of 13 GHz in the 1.5 μm wavelength region was demonstrated
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 1.6 pF; 13 GHz; GaInAsP-InP; MOCVD; bandwidth; self-aligned constricted mesa DFB lasers; stray InP junction capacitance; ultrahigh speed; Bandwidth; Capacitance; Chemical lasers; Distributed feedback devices; Fiber lasers; Gratings; Indium phosphide; MOCVD; Optical device fabrication; Optical fiber communication;
Journal_Title :
Quantum Electronics, IEEE Journal of
