Linear Mode Avalanche Photodiode With High Responsivity Integrated in High-Voltage CMOS

Author

Steindl, Bernhard ; Enne, Reinhard ; Schidl, Stefan ; Zimmermann, Horst

Author_Institution

Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria

Volume

35

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

897

Lastpage

899

Abstract

A fully integrable avalanche photodiode fabricated in a 0.35-μm standard high-voltage CMOS process is presented. The device achieves a high unamplified responsivity (M = 1) of 0.41 A/W and a maximum responsivity (M = 6.6 · 10⁴) of 2.7 · 10⁴ A/W for 5-nW optical power using a 670-nm laser source. The maximum bandwidth of 850 MHz was measured at 500-nW and 5-μW optical power which results in a responsivity bandwidth product of 17.4-GHz · A/W for a gain of M = 50.

Keywords

CMOS integrated circuits; avalanche photodiodes; integrated optoelectronics; bandwidth 17.4 GHz; fully integrable avalanche photodiode; high responsivity; high-voltage CMOS process; laser source; linear mode avalanche photodiode; power 5 muW; power 5 nW; power 500 nW; size 0.35 mum; wavelength 670 nm; Avalanche photodiodes; Bandwidth; CMOS integrated circuits; Capacitance; Optical saturation; Optical sensors; Optical variables measurement; Avalanche photodiodes; CMOS technology; photo detectors; photodiodes;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2336678

Filename

6866114