Title :
Ultra-low-threshold, high-bandwidth, very-low noise operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD
Author :
Krakowski, Michel ; Rondi, Daniel ; Talneau, Anne ; Combemale, Yves ; Chevalier, Guy ; Deborgies, Francois ; Maillot, Philippe ; Richin, Philippe ; Blondeau, Robert ; D´Auria, Luigi ; De Gremoux, Baudouin
Author_Institution :
Thomson-CSF, Orsay, France
fDate :
6/1/1989 12:00:00 AM
Abstract :
GaInAsP/InP distributed-feedback (DFB) buried-ridge-structure laser diodes (BRS-LD) emitting at 1.52 μm have been fabricated on material grown by two-step low-pressure metalorganic chemical-vapor deposition (LP-MOCVD), with a second-order corrugation on the GaInAsP guiding layer. The minimum CW threshold current of 5 mA is believed to be the lowest yet reported for DFB lasers at 1.5 μm. Single-longitudinal-mode operation with a side mode suppression ratio of 40 dB from 20 to 100°C with a temperature evolution of 0.64 Å/°C has been obtained. At only 20 mA above threshold, a bandwidth of 9.6 GHz and a relative intensity noise (RIN) lower than -150 dB/Hz at 4 GHz have been measured
Keywords :
III-V semiconductors; distributed feedback lasers; electron device noise; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.52 micron; 20 to 100 degC; 5 mA; 9.6 GHz; CW threshold current; DFB buried ridge structure laser diodes; GaInAsP-InP; high-bandwidth; low-pressure metalorganic chemical-vapor deposition; relative intensity noise; second-order corrugation; side mode suppression ratio; single longitudinal mode operation; very-low noise operation; Bandwidth; Chemical lasers; Diode lasers; Indium phosphide; Inorganic materials; Laser modes; Laser noise; Optical materials; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
