DocumentCode :
1100757
Title :
The Hooge parameters for n- and p-type Hg1-x Cdx Te
Author :
Zhu, Xi-chen ; Wu, Xiaolan ; Van Der, Ziel A. ; Kelso, E.G.
Author_Institution :
Kunming Institute of Physics, Kunming, Peoples Republic of China
Volume :
32
Issue :
7
fYear :
1985
fDate :
7/1/1985 12:00:00 AM
Firstpage :
1353
Lastpage :
1354
Abstract :
The values of the electron effective mass 
in Hg1-x Cdx Te have been calculated for 
= 0.20, 0.30, 0.40. Using the Debye temperature θD for CdTe, the values of the Hooge parameter for Hg1-x Cdx Te have been estimated as a function of and the temperature 
. In view of the uncertainty in θD , the estimate is probably correct within a factor of 2-3. We have also directly calculated θD for Hg1-x Cdx Te and its associated Hooge parameters as a function of ; except for a possible temperature dependence of θD , the results should be correct near room temperature.
in Hg = 0.20, 0.30, 0.40. Using the Debye temperature θ and the temperature . In view of the uncertainty in θ ; except for a possible temperature dependence of θKeywords :
Density estimation robust algorithm; Effective mass; Electrons; Frequency; Mercury (metals); Resistors; Semiconductor device noise; Temperature dependence; Temperature distribution; Uncertainty;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22123
Filename :
1484869
Link To Document :
