Title :
Wide-band modulation of 1.3 μm InGaAsP buried crescent lasers with iron- and cobalt-doped semi-insulating current blocking layers
Author :
Cheng, Wood-Hi ; Huang, Sun Yuan ; Appelbaum, Ami ; Pooladdej, J. ; Buehring, K.D. ; Wolf, D. ; Renner, Daniel S. ; Hess, K.L. ; Zehr, Stanley W.
Author_Institution :
Rockwell Int. Corp., Dallas, TX, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
The performance characteristics of 1.3-μm InGaAsP semi-insulating buried-crescent (SIBC) lasers with Fe- and co-doped InP current blocking layers are compared. Threshold currents as low as 10 mA (Fe) and 8 mA (Co) at room temperature, total differential quantum efficiency of 60%, high-temperature operation up to 100°C, high-power output of 42 mW/facet (Fe) and 30 mW/facet (Co), and 3-dB modulation bandwidth of 11 GHz have been achieved. These results indicate that both Fe and Co-doped InP layers grown by low-pressure metalorganic chemical-vapor deposition (LPMOCVD) provide effective current confinement for high-performance semi-insulating buried-crescent lasers (SIBC) lasers. A detailed model based on experimental data for SIBC lasers is also presented for the analysis of intrinsic and parasitic effects on the frequency response of the lasers. The model is then used to design lasers with larger modulation bandwidth
Keywords :
III-V semiconductors; cobalt; gallium arsenide; gallium compounds; indium compounds; iron; optical modulation; semiconductor junction lasers; 1.3 micron; 10 mA; 11 GHz; 20 to 100 degC; 60 percent; 8 mA; InGaAsP-InP:Co; InGaAsP-InP:Fe; buried crescent lasers; current confinement; differential quantum efficiency; frequency response; high-power; high-temperature operation; low-pressure metalorganic chemical-vapor deposition; model; modulation bandwidth; semi-insulating current blocking layers; threshold currents; wideband modulation; Bandwidth; Chemical lasers; Frequency response; Indium phosphide; Iron; Laser modes; Optical design; Temperature; Threshold current; Wideband;
Journal_Title :
Quantum Electronics, IEEE Journal of
