DocumentCode :
1100767
Title :
Electrical characteristics and contact resistance of B+-and BF2 +-implanted silicon diodes with furnace and rapid thermal annealing
Author :
Simard-Normandin, M.
Author_Institution :
Northern Telecom Electronics, Ltd., Ottawa, Ontario, Canada
Volume :
32
Issue :
7
fYear :
1985
fDate :
7/1/1985 12:00:00 AM
Firstpage :
1354
Lastpage :
1357
Abstract :
Shallow p+-n junctions in silicon are fabricated by the implantation of 10 keV B+or 50 keV BF2+ ions at a fluence of 3 × 1015/ cm2through a capping layer of 25-nm SiO2 . Sheet resistance, contact resistivity, and forward and reverse bias leakage current are measured for various furnace and rapid thermal annealing (RTA) conditions. SIMS profiles are included. RTA allows the simultaneous achievement of junctions with j < 4 nA/cm2, 
, and 
. cm2for junction depths of the order of 0.25 µm as mesured by the traditional bevel-and-strain method.
, and . cm2for junction depths of the order of 0.25 µm as mesured by the traditional bevel-and-strain method.Keywords :
Conductivity; Contact resistance; Current measurement; Electric variables; Electrical resistance measurement; Furnaces; Leakage current; Rapid thermal annealing; Silicon; Thermal resistance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22124
Filename :
1484870
Link To Document :
