• DocumentCode
    1100767
  • Title

    Electrical characteristics and contact resistance of B+-and BF2+-implanted silicon diodes with furnace and rapid thermal annealing

  • Author

    Simard-Normandin, M.

  • Author_Institution
    Northern Telecom Electronics, Ltd., Ottawa, Ontario, Canada
  • Volume
    32
  • Issue
    7
  • fYear
    1985
  • fDate
    7/1/1985 12:00:00 AM
  • Firstpage
    1354
  • Lastpage
    1357
  • Abstract
    Shallow p+-n junctions in silicon are fabricated by the implantation of 10 keV B+or 50 keV BF2+ions at a fluence of 3 × 1015/ cm2through a capping layer of 25-nm SiO2. Sheet resistance, contact resistivity, and forward and reverse bias leakage current are measured for various furnace and rapid thermal annealing (RTA) conditions. SIMS profiles are included. RTA allows the simultaneous achievement of junctions with j < 4 nA/cm2, R_{s}\\simeq 50 \\Omega / , and \\rho_{c}\\simeq 2 \\times 10^{-6}\\Omega . cm2for junction depths of the order of 0.25 µm as mesured by the traditional bevel-and-strain method.
  • Keywords
    Conductivity; Contact resistance; Current measurement; Electric variables; Electrical resistance measurement; Furnaces; Leakage current; Rapid thermal annealing; Silicon; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22124
  • Filename
    1484870
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100767