Title :
Analysis of leakage current in buried heterostructure lasers with semiinsulating blocking layers
Author :
Asada, Susumu ; Sugou, Shigeo ; Kasahara, Ken-Ichi ; Kumashiro, Shigetaka
Author_Institution :
NEC Corp., Kawasaki, Japan
fDate :
6/1/1989 12:00:00 AM
Abstract :
An effective device structure for reducing leakage current in buried heterostructure laser diodes with semi-insulating InP blocking layers is analyzed. The analysis utilizes a semiconductor device simulator in which deep trap levels are taken into account. It predicts that the addition of a thin wide-bandgap InGaP layer in the semi-insulating region at the mesa boundaries as a barrier to prevent double injection into the semi-insulating region is effective in reducing leakage current
Keywords :
III-V semiconductors; deep levels; gallium arsenide; gallium compounds; indium compounds; laser theory; leakage currents; semiconductor device models; semiconductor junction lasers; InGaAsP-InP; InGaP layer; buried heterostructure lasers; deep trap levels; double injection prevention; leakage current; mesa boundaries; semiconductor device simulator; semiinsulating blocking layers; Analytical models; Charge carrier processes; Conductivity; Diode lasers; Electron traps; Indium phosphide; Leakage current; National electric code; Parasitic capacitance; Semiconductor devices; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
