Title :
Difference-of-Gaussian-Like Characteristics for Optoelectronic Visual Sensor
Author :
Matsui, Yu-Ichi ; Miyoshi, Yoshio
Author_Institution :
Univ. of Shiga Prefecture, Hikone
Abstract :
Architecture using a new nonlinear optoelectronic sensor has been developed to imitate the functions of the higher level visual cortex. The optoelectronic sensor developed in this work has the properties approximated by difference of Gaussian (DOG) functions. The properties are due to the negative photoinduced current (PIC) and the negative differential (ND) characteristics according to the forward bias voltage, which have been successfully obtained for layer structures with a charge-storage layer of InAs/GaAs short-period superlattice. By using the new sensors, an optoelectronic sensing circuit has been designed conceptually to imitate the functions of selectivity to orientation angle, motion-direction and length of slit light in visual cortex.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical sensors; optoelectronic devices; semiconductor superlattices; InAs-GaAs; charge-storage layer; difference-of-Gaussian-like characteristics; higher level visual cortex; motion-direction; negative differential characteristics; negative photoinduced current; nonlinear optoelectronic sensor; optoelectronic visual sensor; orientation angle; short-period superlattice; slit light length; Artificial neural networks; Circuits; Humans; Mathematical model; Optical sensors; Optical signal processing; Optoelectronic and photonic sensors; Sensor phenomena and characterization; Superlattices; Wiring; Difference of Gaussian (DOG); optoelectronic sensor; superlattice; visual cortex;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2007.905040
