Analysis of current leakage in InGaAsP/InP buried heterostructure lasers

Author

Ohtoshi, Tsukuru ; Yamaguchi, Ken ; Chinone, Naoki

Author_Institution

Hitachi, Ltd., Tokyo, Japan

Volume

25

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1369

Lastpage

1375

Abstract

The mechanism of current leakage at high temperatures in InGaAsP/InP buried heterostructure (BH) lasers with p-n-p-n current-blocking structures is analyzed using two-dimensional computer simulation. It is found that no junction in the blocking layers is reverse-biased and that current confinement is due to electrically floating regions in the blocking structures. To minimize the leakage current in these BH lasers, it is necessary to decrease the device width and the connection length between the blocking and cladding layers and to increase the doping level and thickness of the blocking layers

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; leakage currents; semiconductor junction lasers; InGaAsP-InP; buried heterostructure lasers; cladding layers; connection length; current confinement; current leakage; device width; doping level; electrically floating regions; leakage current; p-n-p-n current-blocking structures; two-dimensional computer simulation; Computer simulation; Doping; High speed optical techniques; Indium phosphide; Laser modes; Laser theory; Leakage current; Poisson equations; Radiative recombination; Semiconductor lasers; Temperature; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.29270

Filename

29270