DocumentCode :
1100785
Title :
GaInAsP/InP surface emitting injection laser with a ring electrode
Author :
Uchiyama, Seiji ; Iga, Kenichi
Author_Institution :
Tokyo Institute of Technology, Midoriku, Yokohama, Japan
Volume :
20
Issue :
10
fYear :
1984
fDate :
10/1/1984 12:00:00 AM
Firstpage :
1117
Lastpage :
1118
Abstract :
-A GaInAsP/InP surface emitting injection laser ( 
m) with a ring electrode has been fabricated. In this structure we separated the reflecting mirror from the p-side electrode in order to increase the reflectivity. Threshold current was 90 mA at 77 K and the operating temperature has been raised up to -85°C. The cavity length was 7.5 μm and single longitudinal mode operation was achieved.
m) with a ring electrode has been fabricated. In this structure we separated the reflecting mirror from the p-side electrode in order to increase the reflectivity. Threshold current was 90 mA at 77 K and the operating temperature has been raised up to -85°C. The cavity length was 7.5 μm and single longitudinal mode operation was achieved.Keywords :
Gallium materials/lasers; Chemical lasers; Electrodes; Electrons; Indium phosphide; Laser mode locking; Laser modes; Ring lasers; Semiconductor laser arrays; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1984.1072277
Filename :
1072277
Link To Document :
