Narrow spectral linewidth of MBE-grown GaInAs/AlInAs MQW lasers in the 1.55 μm range

Author

Matsushima, Yuichi ; Utaka, Katsuyuki ; Sakai, Kazuo

Author_Institution

KDD Co. Ltd., Tokyo, Japan

Volume

25

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1376

Lastpage

1380

Abstract

GaInAs-AlInAs multi-quantum-well (MQW) lasers fabricated by molecular-beam epitaxy (MBE) on InP substrates are considered. Room-temperature CW operation of ridge-type stripe MQW lasers was observed in the 1.55-μm wavelength range. Spectral behavior of the MQW lasers was investigated from the standpoint of the linewidth and chirping characteristics. The minimum value of the spectral linewidth was as narrow as 2.5 MHz at an output power of 10 mW in a diode with a cavity length of 750 μm. Small chirping characteristics were also confirmed, in which 1.5-Å chirp width was observed at 1-GHz direct modulation with a modulation depth of 67%

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical modulation; semiconductor growth; semiconductor junction lasers; spectral line breadth; 1.55 micron; 10 mW; GaInAs-AlInAs; InP substrates; cavity length; chirping characteristics; direct modulation; modulation depth; molecular-beam epitaxy; ridge-type stripe MQW lasers; room temperature CW operation; spectral linewidth; Chirp modulation; DH-HEMTs; Diodes; Epitaxial growth; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Power generation; Quantum well devices; Substrates;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.29271

Filename

29271