Title :
Passive FM locking in InGaAsP semiconductor lasers
Author :
Tiemeijer, Luuk F. ; Kuindersma, P.I. ; Thijs, Peter J A ; Rikken, Geert L J
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fDate :
6/1/1989 12:00:00 AM
Abstract :
Passive FM locking of the longitudinal modes in MOVPE (metalorganic vapor-phase epitaxy)-grown InGaAsP semiconductor lasers due to four-wave mixing is discussed. Due to the locking, the lasing field closely resembles a single-frequency modulated wave with a modulation frequency equal to the cavity mode spacing of about 160 GHz, when the lasers are well above threshold. The existence of this FM wave is demonstrated by comparing the fundamental and the second-harmonic spectrum. A simplified analysis of the FM operation which explains the experimental data rather well is presented
Keywords :
III-V semiconductors; frequency modulation; gallium arsenide; gallium compounds; indium compounds; laser mode locking; optical harmonic generation; semiconductor junction lasers; 160 GHz; InGaAsP semiconductor lasers; MOVPE; cavity mode spacing; four-wave mixing; lasing field; longitudinal modes; modulation frequency; passive FM locking; second-harmonic spectrum; single-frequency modulated wave; Dispersion; Epitaxial growth; Epitaxial layers; Equations; Four-wave mixing; Frequency modulation; Laser mode locking; Laser modes; Mirrors; Optical modulation; Power lasers; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
