Title :
Four-wave mixing in GaAs/AlGaAs semiconductor lasers
Author :
Nietzke, Rainer ; Panknin, Peter ; Elsässer, Wolfgang ; Göbel, Ernst O.
Author_Institution :
Fachbereich Phys., Philipps-Univ., Marburg, West Germany
fDate :
6/1/1989 12:00:00 AM
Abstract :
Studies on high-efficiency four-wave mixing (FWM) in semiconductor lasers up to detuning frequencies of about 21 GHz are discussed. Population pulsations of the inverted carrier system due to nonlinear beat frequency inversion modulation are identified as the microscopic origin. A simple description of FWM in terms of frequency-modulation-induced sidebands is discussed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; nonlinear optics; optical modulation; semiconductor junction lasers; 21 GHz; GaAs-AlGaAs; detuning frequencies; four-wave mixing; frequency-modulation-induced sidebands; inverted carrier system; nonlinear beat frequency inversion modulation; population pulsations; semiconductor lasers; third order susceptibility; Four-wave mixing; Frequency; Frequency modulation; Gallium arsenide; Laser modes; Microscopy; Nonlinear optics; Optical mixing; Optical modulation; Optical refraction; Pump lasers; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
