DocumentCode :
1100884
Title :
Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers
Author :
Blood, Peter ; Fletcher, E. Dennis ; Woodbridge, Karl ; Heasman, Keith C. ; Adams, Alfred R.
Author_Institution :
Philips Res. Lab., Redhill, UK
Volume :
25
Issue :
6
fYear :
1989
fDate :
6/1/1989 12:00:00 AM
Firstpage :
1459
Lastpage :
1468
Abstract :
Using window devices, light emission has been observed from the barrier regions of lasers with 25-A-wide quantum wells. From measurements of threshold current as a function of temperature on devices grown by molecular-beam epitaxy using different Al cells for the barriers, the strong influence of nonradiative barrier recombination processes on the threshold current has been demonstrated. Further measurements of threshold current as a function of hydrostatic pressure show that recombination from the L and X conduction-band minima makes an important contribution to the current. The calculations show how the temperature dependence of threshold depend on factors such as cavity length and the number of quantum wells
Keywords :
III-V semiconductors; aluminium compounds; electric current measurement; gallium arsenide; laser variables measurement; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GaAs-AlGaAs; III-V semiconductors; cavity length; hydrostatic pressure; molecular-beam epitaxy; nonradiative barrier recombination processes; quantum well lasers; threshold current; window devices; Blood; Current measurement; DH-HEMTs; Gallium arsenide; Molecular beam epitaxial growth; Pressure measurement; Quantum well lasers; Radiative recombination; Temperature dependence; Temperature sensors; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.29281
Filename :
29281
Link To Document :
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