Low-noise AlGaAs lasers grown by organometallic vapor phase epitaxy

Author

Yamashita, Shigeo ; Ohishi, Akio ; Kajimura, Takashi ; Inoue, Masayuki ; Fukui, Yukio

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

25

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1483

Lastpage

1488

Abstract

The noise behavior of self-pulsation lasers is investigated. It is shown that the pulsation frequency is an important factor in achieving low-noise characteristics under optical feedback. To obtain low-noise lasers, an AlGaAs laser which has a ridge-waveguide self-aligned structure grown by OMVPE (organometallic vapor-phase epitaxy) has been developed. Low-noise characteristics (relative intensity noise ≪1×10^-13 Hz^-1) under optical feedback of ~3% are obtained by controlling the pulsation frequency

Keywords

III-V semiconductors; aluminium compounds; electron device noise; feedback; gallium arsenide; laser variables measurement; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; AlGaAs; III-V semiconductors; low-noise characteristics; low-noise lasers; noise behavior; optical feedback; organometallic vapor phase epitaxy; pulsation frequency; ridge-waveguide self-aligned structure; self-pulsation lasers; Epitaxial growth; Frequency; Laser feedback; Laser modes; Laser noise; Optical control; Optical feedback; Optical noise; Power generation; Semiconductor device noise; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.29284

Filename

29284