50 mW stable single longitudinal mode operation of 780 nm GaAlAs DFB laser

Author

Takigawa, Shinichi ; Uno, Tomoaki ; Kume, Masahiro ; Hamada, Ken ; Yoshikawa, Noriyuki ; Shimizu, Hirokazu ; Kano, Gota

Author_Institution

Matsushita Electron Corp., Osaka, Japan

Volume

25

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1489

Lastpage

1494

Abstract

The achievement of stable single-longitudinal-mode (SLM) operation of a 780 nm GaAlAs distributed-feedback (DFB) laser with output power as high as 50 mW is discussed. The laser employs the buried twin-ridge substrate structure which allows stable fundamental spatial mode operation even at high power levels. The designed coupling strength is 0.5 from the viewpoint of obtaining a low operation current at 50 mW. SLM operation was maintained for powers up to 50 mW at room temperature and in the temperature range from -17 to 37°C at 50 mW. The maximum power attained was 62 mW

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; laser modes; laser transitions; -17 to 37 degC; 50 mW; 62 mW; 780 nm; GaAlAs; III-V semiconductors; buried twin-ridge substrate structure; coupling strength; distributed-feedback laser; single longitudinal mode operation; Distributed feedback devices; Integrated optics; Laser feedback; Laser modes; Laser stability; Optical coupling; Optical feedback; Power generation; Power lasers; Temperature distribution;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.29285

Filename

29285