Title :
Resonant periodic gain surface-emitting semiconductor lasers
Author :
Raja, Mohammad Yasin A ; Brueck, Steven R J ; Osinski, Marek ; Schaus, Christian F. ; McInerney, John G. ; Brennan, Thomas M. ; Hammons, B. Eugene
Author_Institution :
New Mexico Univ., Albuquerque, NM, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
A surface-emitting semiconductor laser structure with a vertical cavity, extremely short gain medium length, and enhanced gain at a specific design wavelength is described. The active region consists of a series of quantum wells spaced at one half the wavelength of a particular optical transition in the quantum wells. This special periodicity allows the antinodes of the standing-wave optical field to coincide with the gain elements, enhancing the frequency selectivity, increasing the gain in the vertical direction by a factor of two compared to a uniform medium or a nonresonant multiple quantum well, and substantially reducing amplified spontaneous emission. Optically pumped lasing was achieved in a GaAs/AlGaAs structure grown by molecular-beam epitaxy, with what is believed to be the shortest gain medium (310 nm) ever reported
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; molecular beam epitaxial growth; optical pumping; semiconductor epitaxial layers; semiconductor junction lasers; 310 nm; GaAs-AlGaAs; enhanced gain; frequency selectivity; gain elements; molecular-beam epitaxy; optical transition; optically pumped lasing; quantum wells; resonant periodic gain surface emitting semiconductor laser; standing-wave optical field; surface-emitting semiconductor laser structure; vertical cavity; Laser transitions; Optical pumping; Optical surface waves; Quantum well lasers; Resonance; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
