High-Performance Short-Wavelength ( ∼ 760 nm) AlGaInAs Quantum-Dot Lasers

We report on AlGaInAs quantum-dot laser structures emitting at ~760 nm with basic device characteristics comparable to state-of-the-art quantum-well lasers. Distributed-feedback laser diodes have been processed emitting in the center of the oxygen A-absorption band. Typical threshold currents of 34 mA (1-mm-long devices), slope efficiencies of 0.33 W/A per facet, and sidemode suppression ratios of 40 dB have been measured at room temperature in continuous-wave mode. Single-mode emission with a maximum output power ges20 mW has been achieved for temperatures up to 55degC.