DocumentCode
1100975
Title
Optical characteristics of high-power nonplanar periodic laser arrays
Author
Zmudzinski, Charles A. ; Givens, Michael E. ; Bryan, Robert P. ; Coleman, James J.
Author_Institution
Compound Semicond. Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Volume
25
Issue
6
fYear
1989
fDate
6/1/1989 12:00:00 AM
Firstpage
1539
Lastpage
1546
Abstract
The authors describe nonplanar arrays, grown by metalorganic chemical vapor deposition, that consist of a periodic array of mesas and grooves, which provides index guiding and prevents lateral lasing. The near- and far-field patterns are shown to be a strong function of the laser structure, particularly of the confining layer composition and effective index step. The near-field pattern determined by the structure affects the external differential quantum efficiency of these arrays relative to similar planar active region devices. Laser emission was generally confined to the mesa regions. A simple model is used as an aid to explain the observed near- and far-field patterns and to identify the mechanisms which confine the optical field to the mesa or groove region
Keywords
chemical vapour deposition; laser theory; semiconductor growth; semiconductor junction lasers; confining layer composition; effective index step; external differential quantum efficiency; far-field patterns; groove region; grooves; high-power nonplanar periodic laser arrays; index guiding; laser structure; mesa regions; mesas; metalorganic chemical vapor deposition; near-field pattern; near-field patterns; nonplanar arrays; optical field; planar active region devices; Chemical lasers; Chemical vapor deposition; Etching; Gallium arsenide; Laser modes; Optical arrays; Optical device fabrication; Optical scattering; Quantum well lasers; Semiconductor laser arrays; Stimulated emission; Substrates;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.29290
Filename
29290
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