Title :
Completely integrated contact-type linear image sensor
Author :
Morozumi, Shinji ; Kurihara, Hajime ; Takeshita, Tetsuyoshi ; Oka, Hideaki ; Hasegawa, Kazumasa
Author_Institution :
Suwa Seikosha Company, Ltd., Nagano-ken, Japan
fDate :
8/1/1985 12:00:00 AM
Abstract :
A new contact-type linear image sensor has been developed, which integrates a-Si:H photodiode and poly-Si TFT driving circuits on a quartz substrate. The C-MOS shift register of poly-Si TFT can operate in the frequency range from dc to 2 MHz. The sensor contains 848 bits with the density of 8 bits/mm on the substrate of 2 × 125 mm size. A readout time of less than 1 µs, a S/N ratio higher than 40 dB, and a saturation exposure of 0.89 lx . s are obtained.
Keywords :
Amorphous materials; Image sensors; Integrated circuit reliability; Light emitting diodes; Optical saturation; Optical sensors; Photodiodes; Switches; Switching circuits; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22162
