DocumentCode :
1101208
Title :
160 × 244 Element PtSi Schottky-barrier IR-CCD image sensor
Author :
Kosonocky, Walter F. ; Shallcross, Frank V. ; Villani, Thomas S. ; Groppe, Joseph V.
Author_Institution :
RCA Laboratories, Princeton, NJ
Volume :
32
Issue :
8
fYear :
1985
fDate :
8/1/1985 12:00:00 AM
Firstpage :
1564
Lastpage :
1573
Abstract :
A 160 × 244 element IR-CCD image sensor was developed with PtSi Schottky-barrier detectors (SBD´s) for thermal imaging in the 3.0-5.0-µm IR band. This imager has 80 × 40 µm2pixels, a fill factor of 39 percent, and a chip size of 584 × 464 mil2. It produces excellent quality thermal imaging with noise-equivalent temperature (NEΔT) of less than 0.1 K for operation at 30 frames/s with standard-TV-interlace f/2.3 optics, and one-point offset-type uniformity corrector. This paper describes the design, construction, and performance of 160 × 244 element IR-CCD imager and the characteristics of the PtSi Schottky-barrier detector elements.
Keywords :
Charge coupled devices; Image sensors; Infrared detectors; Optical imaging; Optical noise; Optical sensors; Pixel; Sensor arrays; Silicides; Temperature sensors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22165
Filename :
1484911
Link To Document :
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