Shortwave infrared 512 × 2 line sensor for earth resources applications

Author

Tower, John R. ; Pellon, Leopold E. ; McCarthy, Brian M. ; Elabd, Hammam ; Moldovan, A.G. ; Kosonocky, Walter F. ; Kalshoven, James E., Jr. ; Tom, David

Author_Institution

RCA Advanced Technology Laboratories, Moorestown, NJ

Volume

32

Issue

8

fYear

1985

fDate

8/1/1985 12:00:00 AM

Firstpage

1574

Lastpage

1583

Abstract

A buttable 512 × 2 IRCCD line image sensor was developed with Pd2Si Schottky-barrier detectors for operation with passive cooling at 120 K in the shortwave infrared (1.1-2.5 µm) band. This monolithic Silicon line imager has 30-µm detectors with 75 percent fill factor and on-chip CCD multiplexers providing one video output for each 512 detector band. The measured performance of the 512 × 2 Pd2Si IRCCD line imager operating at a temperature of 120 K and optical integration time of 4 ms includes a signal-to-noise ratio of 241 for irradiance of $7.2 \\\\mu$ W/cm²at $\\gamma = 1.65 \\\\mu$ m, a dynamic range of 5000, and modulation transfer function greater than 60 percent at the Nyquist frequency. Belmish-free imagers with 3 percent nonuniformity under illumination and nonlinearity of 1.25 percent were produced. The total power dissipation of the imager chip is 18 mW.

Keywords

Charge coupled devices; Cooling; Earth; Frequency measurement; Infrared detectors; Infrared image sensors; Infrared sensors; Multiplexing; Silicon; Time measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1985.22166

Filename

1484912