Monolithic n-channel HgCdTe linear imaging arrays

Monolithic intrinsic NMOS infrared charge-coupled devices (IRCCD´s) fabricated on epitaxial layers of Hg1-xCdxTe (x = 0.37) have been demonstrated. The arrays are 55-bit four-phase surface channel devices with 50 frontside-illuminated MOS IR photodetectors. The device structures utilize photochemical silicon dioxide (SiO2) and themally deposited metals to form the insulators and gates. Integrated reset transistors are included for performing some preliminary on-chip output signal processing, the first use of such a technique in HgCdTe technology. Shift registers with charge transfer efficiencies greater than 0.9995 have been demonstrated, while mean charge transfer efficieneies greater than 0.999 have been measured for temperatures and clock frequencies ranging from 60 to 140 K and 10 to 100 kHz, respectively. Signal-to-noise response (detectivity) has also been evaluated for backgrounds of 6.7 × 10¹³photon . cm^-2. s^-1with resulting detectivities greater than 2.0 × 10¹¹cm . Hz^1/2. W^-1being realized over a temperature range from 80 to 130 K.