Comparison of neutron and electron irradiation for controlling IGT switching speed

Neutron irradiation (NI) and electron irradiation (EI) techniques are used to control carrier lifetime in insulated-gate transistors (IGT´s). The two techniques are compared on the basis of switching speed/forward voltage drop tradeoff, long-term stability, and practicality. It is found that the nature of the crystal defect responsible for lifetime reduction is the same for both NI and EI techniques. Based upon this finding, EI is recommended as the preferred technique because it offers reduced process complexity and the ability to irradiate pretested devices mounted on headers.