DocumentCode
1101313
Title
New CMOS triode transconductor
Author
Lee, S.O. ; Park, S.B. ; Lee, K.R.
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon
Volume
30
Issue
12
fYear
1994
fDate
6/9/1994 12:00:00 AM
Firstpage
946
Lastpage
948
Abstract
A new CMOS transconductor is proposed, which is built around two conversion transistors operating in the triode region with their source and drain voltages kept constant. The proposed transconductor has an input swing range of 7 V peak to peak within 1% THD at supply voltages of ±5 V and a large transconductance tuning range. Moreover, it can operate satisfactorily regardless of the transistor body connection
Keywords
CMOS integrated circuits; linear integrated circuits; tuning; CMOS triode transconductor; conversion transistors; triode region operation; tuning range;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940668
Filename
293059
Link To Document