Single electron switching events in nanometer-scale Si MOSFET´s

High-resolution ac measurements of drain conductance at low temperatures have been made on silicon MOSFET´s with channels as narrow as 0.1 µm. These devices show discrete switching events in the channel resistance associated with individual electrons being captured and emitted from single interface traps. The voltage and temperature dependence of this switching gives detailed information on the characteristics of the trap and its distance from the interface. This switching is a component of low-frequency noise in MOSFET´s and may be an important limit to the performance of small transistors.