• DocumentCode
    1101376
  • Title

    Field-induced guide/antiguide modulators on InGaAsP/InP

  • Author

    Lee, Su-Lin ; Mahon, C.J. ; Dagli, Nadir ; DenBaars, Steven P. ; Coldren, Larry A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
  • Volume
    30
  • Issue
    12
  • fYear
    1994
  • fDate
    6/9/1994 12:00:00 AM
  • Firstpage
    954
  • Lastpage
    956
  • Abstract
    The authors demonstrate the first field-induced guide/antiguide modulators (FIGAMs) on InP-based materials. Good electrical isolation between electrodes was obtained by implanting through the quaternary waveguide and 15 dB on/off ratio has been achieved. Bit error rate measurements for system applications are also reported
  • Keywords
    III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; optical modulation; optical waveguides; FIGAMs; InGaAsP-InP; InGaAsP/InP; InP-based materials; antiguide modulators; bit error rate measurements; electrical isolation; field-induced; guide modulators; on/off ratio; quaternary waveguide; system applications;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940643
  • Filename
    293064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1101376