DocumentCode :
1101448
Title :
High-Speed Low-Noise p-i-n InGaAs Photoreceiver at 2- 
m Wavelength
Author :
Joshi, Abhay ; Becker, Don
Author_Institution :
Discovery Semicond., Ewing
Volume :
20
Issue :
8
fYear :
2008
fDate :
4/15/2008 12:00:00 AM
Firstpage :
551
Lastpage :
553
Abstract :
A p-i-n InGaAs photoreceiver with a 3-dB bandwidth of 6 GHz at 2-mum wavelength is presented. The photodiode, having a responsivity of 1.34 A/W and a dark current of 400 nA, is coupled to a transimpedance amplifier to provide a conversion gain of 670 V/W at room temperature.
Keywords :
III-V semiconductors; indium compounds; microwave amplifiers; microwave receivers; optical receivers; p-i-n photodiodes; photoconductivity; photoemission; wide band gap semiconductors; InGaAs; bandwidth 6 GHz; conversion gain; current 400 nA; dark current; p-i-n InGaAs photoreceiver; p-i-n photodiodes; transimpedance amplifier; wavelength 2 mum; Bandwidth; Dark current; High speed optical techniques; Indium gallium arsenide; Optical mixing; Optical receivers; Optical sensors; PIN photodiodes; Semiconductor device noise; Temperature; Optical receivers; photodiodes;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.918856
Filename :
4472047
Link To Document :
