DocumentCode :
1101459
Title :
Turn-on response of the triangular barrier switch
Author :
Rees, Paul K. ; Barnard, Joseph A.
Author_Institution :
University College of Swansea, Swansea, Wales
Volume :
32
Issue :
9
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
1741
Lastpage :
1744
Abstract :
The switch-on time of a GaAs n-type triangular barrier switch (TBS) has been measured from the 10 to 90 percent points to be 300 ps. The real part of the impedance of the 75-µm-diameter TBS changed from 6.7 kΩ in the OFF state to 9.75 Ω (including device contact resistance) in the ON state. After the switching threshold level was exceeded, the current density through the switch increased exponentially with a time constant of 112 ps. The minority-carrier effective base transit time of 86 ps accounted for most of the TBS switch-on time constant.
Keywords :
Charge carrier processes; Electrical resistance measurement; Electron emission; Gallium arsenide; Gold; Impedance; Laboratories; P-n junctions; Switches; Time measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22189
Filename :
1484935
Link To Document :
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