Large-signal criteria for the design of GaAs FET distributed power amplifiers

An analysis of the GaAs FET distributed network for power amplification shows that the principal circuit values and performance characteristics can be expressed in terms of the GaAs FET large-signal voltages, currents, and power per millimeter of gate width, together with the required power and bandwidth only. The method is useful as a first design step in which the FET structure and distributed network are designed together to realize a monolithic traveling-wave power amplifier.