DocumentCode :
1101499
Title :
A scanning-electron- or light-beam-induced current method for determination of grain boundary recombination velocity in polycrystalline semiconductors
Author :
Dimitriadis, Charalabos A.
Author_Institution :
University of Thessaloniki, Thessaloniki, Greece
Volume :
32
Issue :
9
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
1761
Lastpage :
1765
Abstract :
Analytical expression for the induced current profiles at grain boundaries in polycrystalline solar cells is derived for electron-or light-beam excitation. By fitting the experimental data to the theory it is possible to determine both the interface recombination velocity SGB and the minority-carrier diffusion length 
. The applicability of the theory is demonstrated by evaluating experimental electron-beam-induced current profiles.
. The applicability of the theory is demonstrated by evaluating experimental electron-beam-induced current profiles.Keywords :
Electron beams; Grain boundaries; Length measurement; Photovoltaic cells; Physics; Radiative recombination; Scanning electron microscopy; Semiconductor device measurement; Silicon; Spontaneous emission;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22193
Filename :
1484939
Link To Document :
