• DocumentCode
    1101499
  • Title

    A scanning-electron- or light-beam-induced current method for determination of grain boundary recombination velocity in polycrystalline semiconductors

  • Author

    Dimitriadis, Charalabos A.

  • Author_Institution
    University of Thessaloniki, Thessaloniki, Greece
  • Volume
    32
  • Issue
    9
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    1761
  • Lastpage
    1765
  • Abstract
    Analytical expression for the induced current profiles at grain boundaries in polycrystalline solar cells is derived for electron-or light-beam excitation. By fitting the experimental data to the theory it is possible to determine both the interface recombination velocity SGBand the minority-carrier diffusion length L . The applicability of the theory is demonstrated by evaluating experimental electron-beam-induced current profiles.
  • Keywords
    Electron beams; Grain boundaries; Length measurement; Photovoltaic cells; Physics; Radiative recombination; Scanning electron microscopy; Semiconductor device measurement; Silicon; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22193
  • Filename
    1484939
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1101499